suface mount package. s mhop microelectronics c orp. a STF443 symbol v ds v gs i dm 75 w a p d c 1.67 -55 to 150 i d units parameter -20 -4.5 -23 c/w v v 10 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r ds(on) (m ) max -20v -4.5a 48 @ vgs=-4.0v 47 @ vgs=-4.5v features super high dense cell design for low r ds(on) . rugged and reliable. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja ver 1.0 www.samhop.com.tw apr,26,2013 1 details are subject to change without notice. t a =25 c t a =70 c a t a =70 c w green product esd protected. -3.6 1.07 56 @ vgs=-3.1v 64 @ vgs=-2.5v 50 @ vgs=-3.7v p-channel enhancement mode field effect transistor s g d d t d f n 2 x 2 p i n 1 s d d d d g
symbol min typ max units bv dss -20 v -1 i gss 10 ua v gs(th) -0.5 v m ohm v gs =-4.5v , i d =-2.25a r ds(on) drain-source on-state resistance i dss ua gate threshold voltage v ds =v gs , i d =-1.0ma v ds =-16v , v gs =0v v gs = 10v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =-250ua on characteristics STF443 ver 1.0 -0.75 -1.5 g fs 13 s c iss 880 pf c oss 174 pf c rss 134 pf q g 45 nc 82 nc q gs 225 nc q gd 148 t d(on) 11.4 ns t r 0.8 ns t d(off) 4.6 ns t f ns gate-drain charge v ds =-10v,v gs =0v switching characteristics gate-source charge v dd =-16v i d =-2.25a v gs =-4.5v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =-5v , i d =-2.25a input capacitance output capacitance dynamic characteristics forward transconductance reverse transfer capacitance v gs =-4.0v , i d =-2.25a m ohm c f=1.0mhz c v ds =-16v,i d =-4.5a, v gs =4.5v drain-source diode characteristics and maximum ratings v sd diode forward voltage v gs =0v,i s =-4.5a -0.92 -1.2 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 10us, duty cycle < 1%. c.guaranteed by design, not subject to production testing. d.drain current limited by maximum junction temperature. _ _ www.samhop.com.tw apr,26,2013 2 _ 36 47 37 48 v gs =-3.7v , i d =-2.25a m ohm v gs =-2.5v , i d =-2.25a m ohm 47 64 27 28 36 v gs =-3.1v , i d =-2.25a m ohm 42 56 32 38 50 29
STF443 ver 1.0 www.samhop.com.tw apr,26,2013 3 0 0 20 120 100 80 60 40 150 125 100 75 50 25 175 t a - ambient temperature - c dt - percentage of rated power - % derating factor of forward bias safe operating area 0 0 0.5 3 2.5 2 1.5 1 150 125 100 75 50 25 175 t a - ambient temperature - c pt - total power dissipation - w total power dissipation vs. ambient temperature mounted on fr-4 board of 1 inch 2 , 2oz 0.1 1 10 10 0.1 100 v gs =-4.5v single pulse t a =25 c r d s (o n ) limit 0.01 forward bias safe operating area 100us 1ms 10ms dc -v ds - drain to source voltage - v -i d - drain current - a 100ms 1s pw - pulse width - s rth(ch-a) - transient thermal resistance - c/w transient thermal resistance vs. pulse width 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 0.1 mounted on fr-4 board of 1 inch 2 , 2oz single pulse 1
STF443 ver 1.0 www.samhop.com.tw apr,26,2013 4 0 0 3 6 1 0.8 0.6 0.4 0.2 -v ds - drain to source voltage - v -i d - drain current - a drain current vs. drain to source voltage v gs = -4.5 v 0.01 0 0.1 100 10 1 2.5 2 1.5 1 0.5 -v gs - gate to source voltage - v -i d - drain current - a forward transfer characteristics 3 25 c 75 c 125 c t a = -25 c -50 0.5 0.8 0.7 0.6 150 100 50 0 t ch - channel temperature - c -v gs(off) - gate to source cut-off voltage - v gatebto soure cut-off voltage vs. channel temperature i d = -1.0ma 0.01 0.01 0.1 100 10 1 100 10 1 0.1 -i d - drain current - a . y fs . - forward transfer admittance - s forward transfer admittance vs. drain current 0.9 t a = -25 c 25 c 75 c 125 c 0 20 80 60 40 100 10 1 0.1 -i d - drain current - a r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. drain current v gs = 2.5 v 3.1 v 4.0 v 4.5 v 0 0 30 120 90 60 8 6 4 2 -v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. gate to source voltage i d = -2.25 a 12 10 3.7 v 100 15 9 12 -4.0 v -3.1 v -3.7 v -2.5 v
STF443 ver 1.0 www.samhop.com.tw apr,26,2013 5 q g - gate charge -nc -v gs - gate to drain voltage - v dynamic input characteristics 0.01 0.1 100 10 1 0.9 0.6 0.3 0 -v f(s-d) - source to drain voltage - v -i f - diode forward current - a source to drain diode forward voltage 0 -50 20 80 60 40 150 100 50 0 t ch - channel temperature - c r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. channel temperature i d = -2.25 a 100 v gs = -2.5 v -3.1 v -4.0 v -4.5 v 0 0 4 3 2 12 9 6 3 1 1.8 1.5 1.2 v gs = 0 v -3.7 v 15 v dd = -4 v -10 v -16 v i d = -4.5 a -i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns switching characteristics 10 0.1 100 1000 100 10 1 -v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf capacitance vs. drain to source voltage c oss c rss c iss 1 0.1 10 100 10 1 t d(on) t d(off) t r t f v dd = -16.0 v v gs = -4.5 v r g = 6
STF443 www.samhop.com.tw apr,26,2013 6 package outline dimensions ver 1.0 top view tdfn 2x2-6l bottom view side view symbols millimeters a a1 b c d d1 e min max 0.550 0.650 0.000 0.050 0.250 0.350 0.200 0.300 e1 e2 e f 1.100 ref. 0.950 1.050 0.650 bsc. nom 0.600 0.300 0.250 1.000 1.950 2.000 2.050 0.740 0.790 0.840 1.950 2.000 2.050 tdfn (2 x 2) 06l 1 pin #1 dot by marking pin #1 id chamfer 0.300mm d e a a1 l1 e1 e2 d1 b e c l f 0.200 0.300 0.250 l l1 1.150 1.250 1.200 0.144 0.160 0.152
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